Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors
- 20 June 2013
- journal article
- Published by Wiley in Advanced Materials
- Vol. 25 (32), 4445-4451
- https://doi.org/10.1002/adma.201301362
Abstract
A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III-V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.This publication has 37 references indexed in Scilit:
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