Polymer-based organic field-effect transistor using offset printed source/drain structures

Abstract

Organic field-effect transistors were fabricated using offset printed source/drain structures. Interdigitated electrode structures were printed with a poly(3,4–ethylenedioxythiophene) (PEDOT) formulation. A polymeric semiconductor polytriarylamine and different insulator layers were deposited by spin coating. A field-effect mobility of $3\times {10}^{-3}{\mathrm{cm}}^2{\mathrm{V}}^{-1}{\mathrm{s}}^{-1}$ and on/off ratio of about ${10}^3$ was achieved, making it possible to produce digital logic elements.