A novel cell technology using N-doped GeSbTe films for phase change RAM

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2 March 2004

conference paper
conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE) in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)

https://doi.org/10.1109/vlsit.2003.1221143

Abstract

No abstract available

This publication has 1 reference indexed in Scilit:

Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge₂Sb₂Te₅ Thin Films
Japanese Journal of Applied Physics, 2000

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