High quality heteroepitaxial Ge growth on (100) Si by MBE
- 1 February 1987
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 81 (1-4), 451-457
- https://doi.org/10.1016/0022-0248(87)90432-5
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986
- The heteroepitaxy of Ge on Si(100) by vacuum evaporationJournal of Applied Physics, 1983
- Growth of high quality epitaxial Ge films on (100)Si by sputter depositionApplied Physics Letters, 1982
- The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layersJournal of Applied Physics, 1982
- Solid‐Phase Epitaxial Crystallization of Amorphous Ge on SiJournal of the Electrochemical Society, 1981
- Epitaxial growth of Ge on 〈100〉 Si by a simple chemical vapor deposition techniqueApplied Physics Letters, 1981
- Heteroepitaxy of vacuum-evaporated Ge films on single-crystal SiApplied Physics Letters, 1981
- Solid-phase heteroepitaxy of Ge on 〈100〉SiApplied Physics Letters, 1981