A comprehensive framework for predictive modeling of negative bias temperature instability
- 13 August 2004
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2004 IEEE International Reliability Physics Symposium. Proceedings
Abstract
A quantitative model is developed for the first time, that comprehends all the unique characteristics of NBTI degradation. Several models are critically examined to develop a reaction/diffusion based modeling framework for predicting interface state generation during NBTI stress. NBTI degradation is found to be dominated by diffusion of neutral atomic and molecular hydrogen related defects. Additionally, the presence of hydrogen gettering sites such as unsaturated grain bound- aries significantly enhance NBTI degradation, whereas hydrogen sources reduce NBTI degradation. The model also suggests the possible mechanisms for saturation. The model is calibrated over a range of stress temperatures and voltages. The model captures recovery, experimental delay and frequency effects successfully.Keywords
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