Very low threshold current ridge-waveguide AlGaAs/GaAs single-quantum-well lasers

Abstract

Ridged-waveguide AlGaAs/GaAs single-quantum-well lasers were fabricated from a molecular-beam-grown GRIN-SCH wafer in which a superlattice buffer layer was introduced. Fabricated diodes exhibited excellent lasing characteristics including a very low threshold current of 5 mA with a T0 value as high as 160 K.