A polar modulator transmitter for GSM/EDGE
- 30 November 2004
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 39 (12), 2190-2199
- https://doi.org/10.1109/JSSC.2004.836340
Abstract
This 0.5-/spl mu/m SiGe BiCMOS polar modulator IC adds EDGE transmit capability to a GSM transceiver IC without any RF filters. Envelope information is extracted from the transmit IF and applied to the phase-modulated carrier in an RF variable gain amplifier which follows the integrated transmit VCO. The dual-band IC supports all four GSM bands. In EDGE mode, the IC produces more than 1 dBm of output power with more than 6 dB of margin to the transmit spectrum mask and less than 3% rms phase error. In GSM mode, more than 7 dBm of output power is produced with noise in the receive band less than -164 dBc/Hz.Keywords
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