Electronic properties of the narrow-band material α-
- 15 May 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 53 (19), 12769-12776
- https://doi.org/10.1103/physrevb.53.12769
Abstract
X-ray angle-integrated and ultraviolet angle-resolved photoemission spectra of the low-spin compound α- show that Ru 4d and Cl 3p states contribute to the valence-band structure of this magnetic material. The energy distribution curves measured along the azimuthal directions Γ--Γ and Γ-K-M using He I radiation indicate an uppermost nearly dispersionless structure of Ru 4d origin, and two dispersive features obtained from Cl 3p-derived bands. The photoemission results, together with the optical and magnetic properties described by ligand-field theory, support the view of localized 4d states forming a very narrow Ru 4d band in the vicinity of the Fermi energy. The main 4d emission structure has been thus assigned to 4 unscreened hole states, where the band gap corresponds to intersite d-d transitions, and α- can be classified as a Mott-Hubbard compound in consideration of its electronic and magnetic characteristics. The inconsistency between the photoemission results and the transport properties, describing this material as a conventional band-gap semiconductor, is finally discussed. © 1996 The American Physical Society.
Keywords
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