Simple Tight-Binding Calculation of the Transverse Effective Charges in III-V, II-VI, and IV-IV Compound Semiconductors

Abstract

A simple tight-binding model is used for a derivation of transverse effective charges in III-V, II-VI, and IV-IV compounds. Introduction of Phillips's spectroscopic parameters into the model provides a very good agreement with experiment. Such a procedure is then justified by detailed comparison with the resonance integrals and the intra-atomic integrals deduced from term values, showing that a very crude tight-binding treatment can yield quantitative values in these systems.