Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C
- 1 June 1997
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 117-118, 202-206
- https://doi.org/10.1016/s0169-4332(97)80079-7
Abstract
No abstract availableKeywords
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