Breaking of Valley Degeneracy by Magnetic Field in MonolayerMoSe2

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Abstract
Using polarization-resolved photoluminescence spectroscopy, we investigate the breaking of valley degeneracy by an out-of-plane magnetic field in back-gated monolayer MoSe2 devices. We observe a linear splitting of 0.22meV/T between luminescence peak energies in σ+ and σ emission for both neutral and charged excitons. The optical selection rules of monolayer MoSe2 couple the photon handedness to the exciton valley degree of freedom; so this splitting demonstrates valley degeneracy breaking. In addition, we find that the luminescence handedness can be controlled with a magnetic field to a degree that depends on the back-gate voltage. An applied magnetic field, therefore, provides effective strategies for control over the valley degree of freedom.
Funding Information
  • National Science Foundation (DMR-1010768, ECCS-0335765)
  • Kavli Institute at Cornell for Nanoscale Science
  • Cornell Center for Materials Research
  • Materials Research Science and Engineering Center (DMR-1120296)
  • National Nanotechnology Infrastructure Network
  • Natural Sciences and Engineering Research Council of Canada Postgraduate Scholarship