Effectiveness of Stressors in Aggressively Scaled FinFETs
- 4 April 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 59 (6), 1592-1598
- https://doi.org/10.1109/ted.2012.2189861
Abstract
The stress transfer efficiency (STE) and impact of process-induced stress on carrier mobility enhancement in aggressively scaled FinFETs are studied for different stressor technologies, substrate types, and gate-stack formation processes. TCAD simulations show that strained-source/drain STE is 1.5× larger for bulk FinFETs than for SOI FinFETs. Although a gate-last process substantially enhances longitudinal stress within the channel region, it provides very little improvement in electron mobility over that achieved with a gate-first process. Guidelines for FinFET stressor technology optimization are provided, and performance enhancement trends for future technology nodes are projected.Keywords
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