Integration of organic light-emitting diode and organic transistor via a tandem structure

Abstract

A high-performance organic active matrix pixel was fabricated by using a metal oxide ( V 2 O 5 ) coupling layer that effectively integrates an organic light-emitting diode(OLED) on top of an organic field-effect transistor(OFET). The field-effect mobility of the OFET approached 0.5 cm 2 V − 1 s − 1 and the ON/OFF current ratio was > 10 3 . The brightness of the OLED was on the order of 2000 cd ∕ m 2 , with an efficiency above 3.3 cd ∕ A . The present work describes in detail a methodology for sizing and stacking an OFET in bottom-emitting active matrix pixel circuits. The confinement of pixel dimension ensures the uniformity of light emission. The material for coupling layer can be tailored to achieve maximum device efficiency. A unique active matrix pixel circuit is proposed that renders both the OFET and OLED their individual performance after integration.