Study on the p-MgZnO/i-ZnO/n-MgZnO light-emitting diode fabricated by MOCVD
- 9 November 2009
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 42 (23)
- https://doi.org/10.1088/0022-3727/42/23/235101
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Effect of the magnesium composition on the properties of MgxZn1−xO-based homojunction light-emitting diodesSemiconductor Science and Technology, 2008
- Study on the properties of MgxZn1−xO-based homojunction light-emitting diodes fabricated by MOCVDJournal of Physics D: Applied Physics, 2007
- Fabrication and photoluminescent characteristics of ZnO∕Mg0.2Zn0.8O coaxial nanorod single quantum well structuresApplied Physics Letters, 2006
- Formation and photoluminescent properties of embedded ZnO quantum dots in ZnO∕ZnMgO multiple-quantum-well-structured nanorodsApplied Physics Letters, 2006
- Refractive indices and band-gap properties of rocksalt MgxZn1−xO (0.68⩽x⩽1)Journal of Applied Physics, 2006
- Infrared optical properties of MgxZn1−xO thin films (0⩽x⩽1): Long-wavelength optical phonons and dielectric constantsJournal of Applied Physics, 2006
- Structure, electrical and optical properties of N–In codoped ZnO thin films prepared by ion-beam enhanced deposition methodJournal of Crystal Growth, 2006
- Critical thickness and lattice relaxation of Mg-rich strained Mg0.37Zn0.63O (0001) layers towards multi-quantum-wellsJournal of Applied Physics, 2006
- Temperature dependence of near ultraviolet photoluminescence in ZnO/(Mg, Zn)O multiple quantum wellsApplied Physics Letters, 2001
- Layer-by-layer growth of ZnO epilayer on Al2O3(0001) by using a MgO buffer layerApplied Physics Letters, 2000