Thermally-induced defects in silicon containing oxygen and carbon
- 16 December 1981
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 68 (2), 561-565
- https://doi.org/10.1002/pssa.2210680227
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Luminescence of thermally induced defects in Si crystalsApplied Physics Letters, 1981
- Electrical and infrared spectroscopic investigations of oxygen-related donors in siliconphysica status solidi (a), 1979
- On the electrical activity of oxygen in siliconphysica status solidi (a), 1979
- Photoluminescence Spectra of Thermal Donors in SiliconJapanese Journal of Applied Physics, 1979
- EPR spectra of heat-treatment centers in oxygen-rich siliconSolid State Communications, 1978
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- The effect of carbon on thermal donor formation in heat treated pulled silicon crystalsJournal of Physics and Chemistry of Solids, 1972
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Mechanism of the Formation of Donor States in Heat-Treated SiliconPhysical Review B, 1958
- Effect of Heat Treatment upon the Electrical Properties of Silicon CrystalsJournal of Applied Physics, 1957