A high efficiency and low distortion GaAs power MMIC design in the wide load impedance range by extended use of load-pull method
- 20 January 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 775-778 vol.2
- https://doi.org/10.1109/mwsym.1999.779874
Abstract
A new design technique by an extended use of the load-pull method for a high efficiency and low distortion power amplifier in wide range of load impedances is proposed. A two stage GaAs MMIC power amplifier which meets the Japanese PHS standard with high efficiency and low distortion within load VSWR of 3 was designed by using this method.Keywords
This publication has 2 references indexed in Scilit:
- Phase distortion mechanism of a GaAs FET power amplifier for digital cellular applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-efficiency low adjacent channel leakage GaAs power MMIC for 1.9 GHz digital cordless phonesIEEE Transactions on Microwave Theory and Techniques, 1994