Resonant tunneling through X-valley states in GaAs/AlAs/GaAs single-barrier heterostructures
- 9 October 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (15), 1555-1557
- https://doi.org/10.1063/1.102242
Abstract
Clear negative differential resistance has been observed in a GaAs/AlAs/GaAs single‐barrier heterostructure due to the presence of a quasi‐bound state associated with the X‐point profile. This surprising result is due to the fact that although the Γ‐point profile of this heterostructure is a simple single tunneling barrier, the X‐point profile actually constitutes a quantum well some 0.3 eV deep lying about 0.2 eV above the Γ point of GaAs. The experimental evidence is a sharp cutoff in conductance at about 0.36 V bias, characteristic of tunneling via a confined state.Keywords
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