Effect of atomic ordering and composition changes on the electrical resistivity of Nb3Al, Nb3Sn, Nb3Ge, Nb3Ir, V3Si and V3Ga
- 1 March 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 23 (2), 980-983
- https://doi.org/10.1109/tmag.1987.1064862
Abstract
No abstract availableKeywords
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