Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film
- 15 March 2004
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 264 (1-3), 1-6
- https://doi.org/10.1016/j.jcrysgro.2003.12.014
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Electron paramagnetic resonance studies of Mn2+ ions in β-Ga2O3 single crystalJournal of Applied Physics, 2001
- Synthesis and structure of nanocrystal-assembled bulk GaNJournal of Crystal Growth, 2000
- Band structure of alloys and effects of pressurePhysical Review B, 1999
- Synthesis of gallium nitride by ammonia injection into gallium meltJournal of Crystal Growth, 1999
- Poly(imidogallane): Synthesis of a Crystalline 2-D Network Solid and Its Pyrolysis To Form Nanocrystalline Gallium Nitride in Supercritical AmmoniaChemistry of Materials, 1998
- Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium NitrideChemistry of Materials, 1997
- Preparation of GaN Single Crystals Using a Na FluxChemistry of Materials, 1997
- A Benzene-Thermal Synthetic Route to Nanocrystalline GaNScience, 1996
- New Single-Source Precursor Approach to Gallium NitrideJournal of the American Chemical Society, 1995
- Electron paramagnetic resonance characteristics of the Mn activator in a ZnS:Mn electroluminescent deviceJournal of Applied Physics, 1991