NpN-GaN/InxGa1−xN/GaN heterojunction bipolar transistor on free-standing GaN substrate
- 7 November 2011
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 99 (19), 193501
- https://doi.org/10.1063/1.3659475
Abstract
Data and analysis are presented for NpN-GaN/InGaN/GaN double-heterojunction bipolar transistors (HBTs) grown and fabricated on a free-standing GaN (FS-GaN) substrate in comparison to that on a sapphire substrate to investigate the effect of dislocations in III-nitride HBT epitaxial structures. The performance characteristics of HBTs on FS-GaN exhibit a maximum collector current density of ∼12.3 kA/cm2, dc current gain of ∼90, and maximum differential gain of ∼120 without surface passivation, representing a substantial improvement over similar devices grown on sapphire. This is attributed to the reduction in threading dislocation density afforded by using a homoepitaxial growth on a high-crystalline-quality substrate. The minority carrier diffusion length increases significantly owing to not only a mitigated carrier trap effect via fewer dislocations, but also possibly reduced microscopic localized states.Keywords
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