In0.75Ga0.25As channel layers with record mobility exceeding 12,000cm2/Vs for use in high-κ dielectric NMOSFETs
- 31 August 2006
- journal article
- other
- Published by Elsevier BV in Solid-State Electronics
- Vol. 50 (7-8), 1175-1177
- https://doi.org/10.1016/j.sse.2006.05.017
Abstract
No abstract availableKeywords
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