Optimization of Silicon parameters as a betavoltaic battery: Comparison of Si p-n and Ni/Si Schottky barrier
- 1 August 2016
- journal article
- Published by Elsevier BV in Radiation Physics and Chemistry
- Vol. 125, 205-212
- https://doi.org/10.1016/j.radphyschem.2016.04.012
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Design and simulation of betavoltaic angle sensor Based on 63 Ni–SiApplied Radiation and Isotopes, 2016
- The radiation damage of crystalline silicon PN diode in tritium beta-voltaic batteryApplied Radiation and Isotopes, 2014
- Design and optimization of beta-cell temperature sensor based on 63Ni–SiApplied Radiation and Isotopes, 2014
- Simulations about self-absorption of tritium in titanium tritide and the energy deposition in a silicon Schottky barrier diodeApplied Radiation and Isotopes, 2012
- Investigation on a radiation tolerant betavoltaic battery based on Schottky barrier diodeApplied Radiation and Isotopes, 2012
- Fabrication of SiC p-i-n betavoltaic cell with 63Ni irradiation sourcePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- Gallium Nitride Schottky betavoltaic nuclear batteriesEnergy Conversion and Management, 2011
- 63Ni schottky barrier nuclear battery of 4H-SiCJournal of Radioanalytical and Nuclear Chemistry, 2010
- GaN betavoltaic energy convertersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Bandgap Dependence and Related Features of Radiation Ionization Energies in SemiconductorsJournal of Applied Physics, 1968