Far-infrared optically detected cyclotron resonance observation of quantum effects in GaAs
- 1 May 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (5), 438-441
- https://doi.org/10.1088/0268-1242/5/5/011
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Optical, Hall and cyclotron resonance measurements of GaSb grown by molecular beam epitaxySemiconductor Science and Technology, 1988
- Resonant and nonresonant polarons in semiconductorsPhysical Review B, 1988
- A study of the conduction band non-parabolicity, anisotropy and spin splitting in GaAs and InPSemiconductor Science and Technology, 1987
- Resonant magneto-polarons in bulk GaAsSolid State Communications, 1986
- Optically detected cyclotron resonance in a GaAs/As superlatticePhysical Review B, 1985
- Optical detection of cyclotron resonance in GaP and ZnTeSolid State Communications, 1985
- Cyclotron resonance study of polarons in GaAsPhysical Review B, 1983
- Quantum resonances in the valence bands of germanium. II. Cyclotron resonances in uniaxially stressed crystalsPhysical Review B, 1974
- Valence-Band Parameters in Cubic SemiconductorsPhysical Review B, 1971
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956