High-temperature ion implantation in diamond
- 16 November 1978
- journal article
- research article
- Published by Wiley in physica status solidi (a)
- Vol. 50 (1), 237-242
- https://doi.org/10.1002/pssa.2210500127
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Model correction for the formation of amorphous silicon by ion implantationRadiation Effects, 1973
- Radiation induced defects in diamondRadiation Effects, 1971
- A model for the formation of amorphous Si by ion bombardmentRadiation Effects, 1970
- USE OF CHARACTERISTIC X RAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMONDApplied Physics Letters, 1969
- Imperfections in type I and type II diamondsProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1962
- Electron-Spin Resonance of Nitrogen Donors in DiamondPhysical Review B, 1959