Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
- 22 November 2016
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 38 (1), 99-102
- https://doi.org/10.1109/led.2016.2631640
Abstract
In this letter, we report a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction. When a high stress voltage is applied on the gate, a large voltage drop and an electric field occur in the depletion region of the p-GaN close to the metal interface, promoting the formation of a percolation path. We have investigated the mechanisms underlying the gate breakdown by adopting different stress conditions, analyzing the influence of the temperature, and investigating the activation energy of the traps. In addition, thanks to this approach, the device lifetime has been evaluated and an original empirical model, representing the relationship between the gate leakage current and the time to failure, has been proposed.Keywords
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