Temperature dependence of avalanche breakdown for epitaxial diodes in 4H silicon carbide
- 28 September 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (13), 1850-1852
- https://doi.org/10.1063/1.122303
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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