Effect of TiO2 addition on the microstructure and electrical properties of ZnO-based linear resistance ceramics
- 27 November 2011
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science: Materials in Electronics
- Vol. 23 (2), 445-450
- https://doi.org/10.1007/s10854-011-0579-3
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Effect of thermal annealing treatment on structural, electrical and optical properties of transparent sol–gel ZnO thin filmsMaterials Research Bulletin, 2005
- Ceramic varistors based on ZnO–SnO2Journal of the European Ceramic Society, 2004
- Preparation and thermoelectric properties of Al-doped ZnO ceramicsMaterials Science and Engineering B, 2003
- Influence of praseodymium oxide/cobalt oxide ratio on microstructure and electrical properties of zinc oxide varistor ceramicsMaterials Chemistry and Physics, 2003
- Deep donors in polycrystalline Mn-doped ZnOMaterials Chemistry and Physics, 2002
- Study of structural and electrical properties of grain-boundary modified ZnO films prepared by sol–gel techniqueMaterials Chemistry and Physics, 2002
- Defect chemistry and electrical characteristics of undoped and Mn-doped ZnOJournal of the European Ceramic Society, 2002
- Role of grain boundaries on the electrical conductivity of nanophase zinc oxideMaterials Science and Engineering: A, 2001
- The dielectric properties and optical propagation loss of c-axis oriented ZnO thin films deposited by sol–gel processCeramics International, 2000
- Effects of additives and secondary phases on the sintering behavior of zinc oxide-based varistorsMaterials Chemistry and Physics, 2000