Dopants Promoting Ferroelectricity in Hafnia: Insights from a comprehensive Chemical Space Exploration
- 26 October 2017
- journal article
- research article
- Published by American Chemical Society (ACS) in Chemistry of Materials
- Vol. 29 (21), 9102-9109
- https://doi.org/10.1021/acs.chemmater.7b02835
Abstract
No abstract availableKeywords
Funding Information
- Army Research Office (W911NF-15-1-0593)
This publication has 40 references indexed in Scilit:
- Ferroelectricity in undoped hafnium oxideApplied Physics Letters, 2015
- The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy modelJournal of Applied Physics, 2015
- Pathways towards ferroelectricity in hafniaPhysical Review B, 2014
- Recent progress in ab initio simulations of hafnia-based gate stacksJournal of Materials Science, 2012
- Ferroelectricity in hafnium oxide thin filmsApplied Physics Letters, 2011
- Oxygen defect accumulation at Si:HfO2 interfacesApplied Physics Letters, 2008
- High dielectric constant gate oxides for metal oxide Si transistorsReports on Progress in Physics, 2005
- Dielectric properties of nanoscaleslabsPhysical Review B, 2005
- Zinc oxide nanostructures: growth, properties and applicationsJournal of Physics: Condensed Matter, 2004
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001