Highly efficient optical phase modulator in SOI waveguides
- 16 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (6), 451-452
- https://doi.org/10.1049/el:19950328
Abstract
The realisation of a low-loss, highly efficient, singlemode optical phase modulator in SOI is reported. At a wavelength of 1.5 µm the figure of merit for the device, the induced phase shift per volt per millimetre, is greater than 200°/V/mm. To our knowledge, this is the highest reported value to date. In addition, the device drive current (< 10 mA) is thought to be the lowest yet reported.Keywords
This publication has 10 references indexed in Scilit:
- Silicon-on-insulator optical rib waveguides: loss, mode characteristics, bends and y-junctionsIEE Proceedings - Optoelectronics, 1994
- Integrated optical switches in silicon based on SiGe-waveguidesIEEE Photonics Technology Letters, 1993
- Thin-film thermo-optic GexSi_1−x Mach–Zehnder interferometerOptics Letters, 1992
- Low-loss planar optical waveguides fabricated in SIMOX materialIEEE Photonics Technology Letters, 1992
- Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effectApplied Physics Letters, 1991
- Fabry-Perot optical intensity modulator at 1.3 mu m in siliconIEEE Photonics Technology Letters, 1991
- Large single-mode rib waveguides in GeSi-Si and Si-on-SiO/sub 2/IEEE Journal of Quantum Electronics, 1991
- Low loss singlemode optical waveguides with large cross-section in silicon-on-insulatorElectronics Letters, 1991
- 1.3 μm electro-optic silicon switchApplied Physics Letters, 1987
- Electrooptical effects in siliconIEEE Journal of Quantum Electronics, 1987