Density of interface states, excess capacitance and series resistance in the metal–insulator–semiconductor (MIS) solar cells
- 31 January 2005
- journal article
- research article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 85 (3), 345-358
- https://doi.org/10.1016/j.solmat.2004.05.004
Abstract
No abstract availableKeywords
Funding Information
- Devlet Planlama Örgütü (2001K20590, FEF.05/2003-72)
This publication has 40 references indexed in Scilit:
- The role of interface states and series resistance on the I–V and C–V characteristics in Al/SnO2/p-Si Schottky diodesSolid-State Electronics, 2003
- Temperature dependent electrical characteristics of AlSiOxpSi solar cellsSolar Energy Materials and Solar Cells, 1994
- Simple interface-layer model for the nonideal characteristics of the Schottky-barrier diodeSolid-State Electronics, 1992
- Origin of the anomalous peak in the forward capacitance-voltage plot of a Schottky barrier diodeSolid-State Electronics, 1992
- Parameter extraction from non-ideal C−V characteristics of a Schottky diode with and without interfacial layerSolid-State Electronics, 1992
- Conductance technique in MOSFETs: Study of interface trap properties in the depletion and weak inversion regimesSolid-State Electronics, 1988
- On the current transport mechanism in a metal—insulator—semiconductor (MIS) diodeSolid-State Electronics, 1986
- Aluminum-natural oxide-p type silicon (MIS) solar cellsSolar Energy Materials, 1980
- A better approach to the evaluation of the series resistance of solar cellsSolid-State Electronics, 1979
- Excess capacitance and non-ideal Schottky barriers on GaAsSolid-State Electronics, 1976