Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors
- 15 April 2000
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 87 (8), 3900-3904
- https://doi.org/10.1063/1.372432
Abstract
No abstract availableKeywords
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