Study of AlN dielectric film on graphene by Raman microscopy
- 7 December 2009
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (23), 233110
- https://doi.org/10.1063/1.3271676
Abstract
Dielectric film on graphene severely affects the performance of graphene field-effect transistors (GFETs). The authors investigated AlN dielectric film on graphene by Raman microscopy. AlN deposition led to the appearance of disorder-related peaks and to a wider Raman-active peak. The intensities of the disorder-related modes decreased exponentially with an increase in the layer number of graphene, indicating that AlN dielectric film mainly affected the surface of graphene. According to the experimental results, the authors suggested that few-layer graphene might be a better choice than single-layer graphene for the application of GFET.Keywords
This publication has 11 references indexed in Scilit:
- Control of Graphene's Properties by Reversible Hydrogenation: Evidence for GraphaneScience, 2009
- Operation of Graphene Transistors at Gigahertz FrequenciesNano Letters, 2008
- Temperature-Dependent Transport in Suspended GraphenePhysical Review Letters, 2008
- Top-gated graphene field-effect-transistors formed by decomposition of SiCApplied Physics Letters, 2008
- Making graphene visibleApplied Physics Letters, 2007
- Raman spectroscopy of graphene and graphite: Disorder, electron–phonon coupling, doping and nonadiabatic effectsSolid State Communications, 2007
- Spatially Resolved Raman Spectroscopy of Single- and Few-Layer GrapheneNano Letters, 2007
- Raman Scattering from High-Frequency Phonons in Supported n-Graphene Layer FilmsNano Letters, 2006
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004
- Temperature-dependent Raman spectra and anomalous Raman phenomenon of highly oriented pyrolytic graphitePhysical Review B, 1998