Growth and characterization of LiGaO2 substrate crystal for GaN epitaxy
- 15 June 2000
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 216 (1-4), 343-347
- https://doi.org/10.1016/s0022-0248(00)00417-6
Abstract
No abstract availableKeywords
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- MBE growth and properties of GaN on GaN/SiC substratesSolid-State Electronics, 1997
- Metalorganic chemical vapor deposition of monocrystalline GaN thin films on β-LiGaO2 substratesApplied Physics Letters, 1996
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992