Doped surfaces in one sun, point-contact solar cells
- 10 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (15), 1460-1462
- https://doi.org/10.1063/1.101345
Abstract
This letter reports two new types of large-area (>8.5 cm2), backside, point-contact solar cells with doped surfaces, designed for use in unconcentrated sunlight. One type was fabricated on an intrinsic substrate with an optimized phosphorus diffusion on the sunward surface. The apertured-area efficiency was independently measured to be 22.3% at 1 sun (0.100 W/cm2), 25 °C, the highest reported for a silicon solar cell. The other type is constructed on a doped substrate, and has an apertured-area efficiency of 20.9%, the highest reported for a point-contact solar cell with a base in low-level injection. Both cells have record open-circuit voltages above 700 mV.Keywords
This publication has 6 references indexed in Scilit:
- Design criteria for Si point-contact concentrator solar cellsIEEE Transactions on Electron Devices, 1987
- 25-Percent efficient low-resistivity silicon concentrator solar cellsIEEE Electron Device Letters, 1986
- 27.5-percent silicon concentrator solar cellsIEEE Electron Device Letters, 1986
- Point-contact solar cells: Modeling and experimentSolar Cells, 1986
- A 720 mV open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cellApplied Physics Letters, 1985
- Advantages of metal-insulator-semiconductor structures for silicon solar cellsSolar Cells, 1983