Microwave phenomena in bulk GaAs
- 1 January 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (1), 94-105
- https://doi.org/10.1109/t-ed.1966.15640
Abstract
CW microwave oscillations were generated at room temperature by using n -GaAs with a carrier concentration 10 13 - 10 14 per cc. Fundamental frequencies between 1 - 10 kMc were excited, and harmonic signals up to 21 kMc were detected. The maximum power output and efficiency on CW basis were 56 mW and 5.2 percent, respectively, at 2 - 3 kMc. A study was made of harmonic content, linewidth, circuit and electronic tunability, as well as the effects of sample thickness, bias voltage, and temperature, on the observed signal frequency. For sample length × carrier concentration products between 2×10 10 - 2 × 10 12 cm -2 there was a wide diversity in behavior observed in different samples. This was tentatively attributed to the possibility of exciting not only traveling dipole domains but also growing space-charge waves. These growing space-charge waves were found to exist in samples where the condition nl < 2 × 10 12 cm -2 was satisfied, and are also suspected of being responsible for the observed microwave amplification in bulk GaAs. Three different contacts were used successfully: nickeltin, indium-nickel, and indium-gold. These contacts, and the general semiconductor preparation techniques, will be described in detail.Keywords
This publication has 13 references indexed in Scilit:
- MICROWAVE AMPLIFICATION IN A DC-BIASED BULK SEMICONDUCTORApplied Physics Letters, 1965
- Active modes of interaction in bulk GaAsIEEE Transactions on Electron Devices, 1965
- Phenomenological aspects of CW microwave oscillations in GaAsSolid State Communications, 1965
- Mechanism of the Gunn Effect from a Pressure ExperimentPhysical Review Letters, 1965
- Continuous Microwave Oscillations of Current in GaAsIBM Journal of Research and Development, 1964
- Alloys for GaAs devicesSolid-State Electronics, 1964
- Theory of the Gunn effectProceedings of the IEEE, 1964
- Transferred Electron Amplifiers and OscillatorsProceedings of the IRE, 1962
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society, 1961
- Electroless Nickel Plating for Making Ohmic Contacts to SiliconJournal of the Electrochemical Society, 1957