Higher Absorption Edges in6HSiC

Abstract

The absorption of $6H$ SiC was measured for photon energies up to 4.9 eV, where the absorption coefficient is 4.6×${10}^4$ ${\mathrm{cm}}^{-1\mathrm{}}$. Samples as thin as 1.8μ were prepared by grinding and polishing. Indirect absorption edges were found at 3.0, 3.7, and 4.1 eV. A fourth absorption edge at 4.6 eV could not be positively identified as direct or indirect.