Light Emission from Inelastic Electron Tunneling
- 4 October 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 37 (14), 923-925
- https://doi.org/10.1103/physrevlett.37.923
Abstract
We report the discovery of a new method for the generation of light. This technique yields a broad-band light source with a high frequency linear cutoff which is dependent only upon the applied voltage through the quantum relation . The light source consists of a metal-insulator-metal tunneling junction. The effect can be interpreted in terms of inelastic tunneling excitation of optically coupled surface plasmon modes.
Keywords
This publication has 11 references indexed in Scilit:
- Plasma Radiation from Tunnel JunctionsPhysical Review Letters, 1976
- Experimental study of quantum size effects in thin metal films by electron tunnelingPhysical Review B, 1975
- Electroluminescence in Al-Al2O3-Au diodesJournal of Applied Physics, 1975
- Theory of Electron-Surface-Plasmons Interactions in Tunneling, Low-Energy-Electron Diffraction, and PhotoemissionPhysical Review B, 1971
- Surface Plasmons in Thin FilmsPhysical Review B, 1969
- Observations of Surface Plasmon Excitation by Tunneling Electrons in GaAs-Pb Tunnel JunctionsPhysical Review Letters, 1969
- Molecular Vibration Spectra by Inelastic Electron TunnelingPhysical Review B, 1968
- Theory of Inelastic Electron-Molecule Interactions in Tunnel JunctionsPhysical Review Letters, 1967
- Molecular Vibration Spectra by Electron TunnelingPhysical Review Letters, 1966
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965