Capacitance calculations in MOSFET VLSI
- 1 January 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 3 (1), 6-7
- https://doi.org/10.1109/edl.1982.25454
Abstract
A simple empirical relation for the calculation of the capacitance of interconnection lines in MOSFET VLSI, including edge effects, is presented. The equation gives approximate results compared to two-dimensional computer calculations.Keywords
This publication has 1 reference indexed in Scilit:
- Accurate metallization capacitances for integrated circuits and packagesIEEE Journal of Solid-State Circuits, 1973