Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell
- 30 November 2008
- journal article
- research article
- Published by Elsevier BV in Solar Energy Materials and Solar Cells
- Vol. 92 (11), 1500-1507
- https://doi.org/10.1016/j.solmat.2008.06.015
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Criteria for improved open-circuit voltage in a-Si:H(N)∕c-Si(P) front heterojunction with intrinsic thin layer solar cellsJournal of Applied Physics, 2008
- Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bondsPhysical Review B, 2007
- Physical aspects of a-Si:H/c-Si hetero-junction solar cellsThin Solid Films, 2007
- Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substratesThin Solid Films, 2006
- About the efficiency limits of heterojunction solar cellsJournal of Non-Crystalline Solids, 2006
- Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapor deposited silicon heterojunction solar cellsThin Solid Films, 2005