Continuous room-temperature operation of GaAs-AlxGa1−xAs double-heterostructure lasers prepared by molecular-beam epitaxy
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 28 (9), 501-503
- https://doi.org/10.1063/1.88832
Abstract
The continuous (cw) operation at temperatures as high as 100 °C of stripe‐geometry GaAs‐AlxGa1−xAs double‐heterostructure lasers fabricated by molecular‐beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12‐μm‐wide stripe‐geometry lasers with 380‐μm‐long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature.Keywords
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