p-type Ge-channel MODFETs with high transconductance grown on Si substrates
- 1 April 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 14 (4), 205-207
- https://doi.org/10.1109/55.215149
Abstract
Modulation-doped FET (MODFET) structures with hole channels consisting of pure Ge were grown by molecular beam epitaxy (MBE) on Si substrates. To overcome the relatively large lattice mismatch, between Si and Ge, a relaxed Si/sub 1-x/Ge/sub x /buffer layer with linearly graded Ge concentration and a final x value of around 70% was grown first. Hall mobilities of up to 1300 cm/sup 2//V-s at room temperature and 14000 cm/sup 2//V-s at 77 K were measured. Devices with and without gate recess were fabricated, which result in enhancement- and depletion-type FETs. Maximum extrinsic transconductances of 125 and 290 mS/mm at room temperature and 77 K, respectively, were found for gate lengths L/sub G/ around 1.2 mu m.Keywords
This publication has 10 references indexed in Scilit:
- High-transconductance n-type Si/SiGe modulation-doped field-effect transistorsIEEE Electron Device Letters, 1992
- High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layerSemiconductor Science and Technology, 1992
- Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductanceElectronics Letters, 1992
- Extremely high electron mobility in Si/GexSi1−x structures grown by molecular beam epitaxyApplied Physics Letters, 1991
- High hole mobility in strained Ge channel of modulation-doped p-Si0.5Ge0.5/Ge/Si1−xGex heterostructureJournal of Crystal Growth, 1991
- Strain-controlled Si-Ge modulation-doped FET with ultrahigh hole mobilityIEEE Electron Device Letters, 1991
- Effect of interface quality on the electrical properties of p-Si/SiGe two-dimensional hole gas systemsApplied Physics Letters, 1990
- Gallium doping of silicon molecular beam epitaxial layers at low temperatures and under Si+ ion bombardmentThin Solid Films, 1990
- Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET'sIEEE Electron Device Letters, 1986
- Directions in CMOS technologyPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1983