Impurity Scattering in Semiconductors
- 1 January 1956
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 69 (1), 76-82
- https://doi.org/10.1088/0370-1301/69/1/310
Abstract
The theory of impurity scattering in semiconductors has been developed, and the combination of impurity and lattice scattering has been considered for the general case of any degree of degeneracy of the charge carriers. A comparison is made between theory and experimental results obtained with germanium and indium antimonide.Keywords
This publication has 11 references indexed in Scilit:
- Electrical and Optical Properties of Intermetallic Compounds. I. Indium AntimonidePhysical Review B, 1954
- Optical and Photo-Electrical Properties of Indium AntimonideProceedings of the Physical Society. Section B, 1954
- Die elektrischen Eigenschaften von Indiumantimonid IIZeitschrift für Naturforschung A, 1954
- Electrical Properties of-Type GermaniumPhysical Review B, 1954
- The Adiabatic Hall Effect in SemiconductorsPhysical Review B, 1953
- The Combination of Resistivities in SemiconductorsPhysical Review B, 1951
- The Hall Coefficient of SemiconductorsPhysical Review B, 1951
- Transition from Classical to Quantum Statistics in Germanium Semiconductors at Low TemperaturePhysical Review B, 1947
- The computation of Fermi-Dirac functionsPhilosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences, 1938
- The Electrical Resistance of Dilute Solid SolutionsMathematical Proceedings of the Cambridge Philosophical Society, 1936