Mechanism of High Gain in GaAs Photoconductive Detectors under Low Excitation
- 1 May 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (5A), L299-301
- https://doi.org/10.1143/jjap.23.l299
Abstract
Very high photoconductive gain of about 104–105 is observed in GaAs photoconductive detectors for low photon flux density of 1015–1017 photons/(cm2·s). This high gain decreases with increasing photon flux density. A model is proposed which includes carrier separation by surface band dending and surface recombination of photogenerated carriers controlled by surface barrier height. This model is shown to quantitatively explain the photon flux density dependence of both high gain and response time.Keywords
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