Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy
- 15 April 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8), 802-804
- https://doi.org/10.1063/1.94891
Abstract
In selectively doped GaAs‐(AlGa)As heterostructures the two‐dimensional (2D) electron density is found to be monotonically decreasing with increasing separation (t0) between the mobile carriers and the doped (AlGa)As layer. A quantitative description of this t0 dependence requires the Si dopant to create a deep center in (Al0.3Ga0.7)As. For t0≳60 Å the low‐temperature electron mobility, which can be as high as 1.6×106 cm2/Vs, does not show a correlation with t0. Unidentified and as yet uncontrollable impurities in the vicinity of the 2D system are a likely source for the residual electron scattering.Keywords
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