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Electroplating Copper onto Resistive Barrier Films
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Electroplating Copper onto Resistive Barrier Films
Electroplating Copper onto Resistive Barrier Films
KT
Ken M. Takahashi
Ken M. Takahashi
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1 January 2000
journal article
Published by
The Electrochemical Society
in
Journal of the Electrochemical Society
Vol. 147
(4)
,
1414-1417
https://doi.org/10.1149/1.1393370
Abstract
An analytical solution for the metal resistance‐controlled plating current distribution on circular wafers is obtained for determining the conditions under which a uniform metal film can be electrodeposited on a resistive film. Results indicate that, when using conventional copper plating solutions, uniform films cannot be deposited on 500 Å thick barrier layers consisting of Ta (or more resistive metals) on 200 mm wafers, regardless of plating current density or the use of pulse reverse plating. Uniformity can be characterized by a dimensionless polarization parameter that reflects the influences of current density and physical and chemical properties. Of these properties, the only one that can be varied enough to allow Cu plating on a barrier film is the plating exchange current density, . By lowering the copper concentration and thus in the plating bath by one or two orders of magnitude below levels that are commonly employed, the terminal effect can be reduced to the point where a uniform conformal conduction layer can be electrodeposited. Subsequently, the bulk copper film can be plated at high rates. © 2000 The Electrochemical Society. All rights reserved.
Keywords
COPPER
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Cited by 51 articles