Flow instability of molten silicon in the Czochralski configuration
- 1 April 1990
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 102 (1-2), 16-20
- https://doi.org/10.1016/0022-0248(90)90884-n
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Natural and forced convection of molten silicon during Czochralski single crystal growthJournal of Crystal Growth, 1989
- Direct observation by X-ray radiography of convection of molten silicon in the Czochralski growth methodJournal of Crystal Growth, 1988
- Three-dimensional simulations of the Czochralski bulk flowJournal of Crystal Growth, 1984
- Finite-element simulation of Czochralski bulk flowJournal of Crystal Growth, 1983
- A parameter sensitivity study for Czochralski bulk flow of siliconJournal of Crystal Growth, 1982
- Flow transitions in Czochralski oxide meltsJournal of Crystal Growth, 1982
- Changes in fluid flow during Czochralski growthJournal of Crystal Growth, 1977
- Temperature Oscillations in Czochralski Crystal GrowthJournal of the Electrochemical Society, 1967
- Transition in circular Couette flowJournal of Fluid Mechanics, 1965
- The instability of a layer of fluid heated below and subject to Coriolis forces. IIProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1955