Multi-silicon ridge nanofabrication by repeated edge lithography

Abstract

We present a multi-Si nanoridge fabrication scheme and its application in nanoimprint lithography (NIL). Triple Si nanoridges approximately 120 nm high and 40 nm wide separated by 40 nm spacing are fabricated and successfully applied as a stamp in nanoimprint lithography. The fabrication scheme, using a full-wet etching procedure in combination with repeated edge lithography, consists of hot H(3)PO(4) acid SiN(x) retraction etching, 20% KOH Si etching, 50% HF SiN(x) retraction etching and LOCal Oxidation of Silicon (LOCOS). Si nanoridges with smooth vertical sidewalls are fabricated by using Si 110 substrates and KOH etching. The presented technology utilizes a conventional photolithography technique, and the fabrication of multi-Si nanoridges on a full wafer scale has been demonstrated.