Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistors
- 13 November 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (20), 202908
- https://doi.org/10.1063/1.2387985
Abstract
The authors report on the role of MgO capping layers in notably reducing leakage currents and improving mobility in ZnOthin film transistors(TFTs) utilizing compatible high- k Bi 1.5 Zn 1.0 Nb 1.5 O 7 (BZN) gate insulators. All room temperature processed ZnO based TFTs with stacked MgO/BZN gate insulator exhibited a much enhanced field effect mobility of 5.4 cm 2 ∕ V s with excellent saturation characteristics as compared to that ( μ FE = 1.13 cm 2 ∕ V s ) of ZnO based TFTs with BZN gate insulator. This work demonstrates the suitability of MgO/BZN stacked gate insulators in the fabrication of low voltage ZnO based TFTs on plastic substrates.Keywords
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