Chemically Cross-Linked Thin Poly(vinylidene fluoride-co-trifluoroethylene)Films for Nonvolatile Ferroelectric Polymer Memory
- 8 February 2011
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 3 (2), 582-589
- https://doi.org/10.1021/am1011657
Abstract
Both chemically and electrically robust ferroelectric poly(vinylidene fluoride-co-trifluoro ethylene) (PVDF-TrFE) films were developed by spin-coating and subsequent thermal annealing with the thermal cross-linking agent 2,4,4-trimethyl-1,6-hexanediamine (THDA). Well-defined ferroelectric β crystalline domains were developed with THDA up to approximately 50 wt %, with respect to polymer concentration, resulting in characteristic ferroelectric hysteresis polarization-voltage loops in metal/cross-linked ferroelectric layer/metal capacitors with remnant polarization of approximately 4 μC/cm2. Our chemically networked film allowed for facile stacking of a solution-processable organic semiconductor on top of the film, leading to a bottom-gate ferroelectric field effect transistor (FeFET). A low-voltage operating FeFET was realized with a networked PVDF-TrFE film, which had significantly reduced gate leakage current between the drain and gate electrodes. A solution-processed single crystalline tri-isopropylsilylethynyl pentacene FeFET with a chemically cross-linked PVDF-TrFE film showed reliable I−V hysteresis with source-drain ON/OFF current bistablility of 1 × 103 at a sweeping gate voltage of ±20 V. Furthermore, both thermal micro/nanoimprinting and transfer printing techniques were conveniently combined for micro/nanopatterning of chemically resistant cross-linked PVDF-TrFE films.Keywords
This publication has 37 references indexed in Scilit:
- Organic Nonvolatile Memory Devices Based on FerroelectricityAdvanced Materials, 2010
- Polymeric gate dielectric interlayer of cross-linkable poly(styrene-r-methylmethacrylate) copolymer for ferroelectric PVDF-TrFE field effect transistor memoryOrganic Electronics, 2009
- Organic non-volatile memories from ferroelectric phase-separated blendsNature Materials, 2008
- Spin cast ferroelectric beta poly(vinylidene fluoride) thin films via rapid thermal annealingApplied Physics Letters, 2008
- Low‐Voltage Organic Thin‐Film Transistors with High‐k Nanocomposite Gate Dielectrics for Flexible Electronics and Optothermal SensorsAdvanced Materials, 2007
- Nonvolatile Memory Elements Based on Organic MaterialsAdvanced Materials, 2007
- High charge density and mobility in poly(3-hexylthiophene) using a polarizable gate dielectricOrganic Electronics, 2006
- Irreversible extinction of ferroelectric polarization in P(VDF-TrFE) thin films upon melting and recrystallizationApplied Physics Letters, 2006
- PVDF and P(VDF-HFP)-based proton exchange membranesSolid State Ionics, 2004
- Composition and sequence distribution of vinylidene fluoride copolymer and terpolymer fluoroelastomers. Determination by 19F nuclear magnetic resonance spectroscopy and correlation with some propertiesPolymer, 1987