Improved organic thin-film transistor performance using novel self-assembled monolayers
- 13 February 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (7), 073505
- https://doi.org/10.1063/1.2173711
Abstract
Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.Keywords
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